Comparison of device performance of highly strained Ga _1−x InxAs/a1 _0.48 In _0.52 As (0.53 ≤ × ≤ 0.90) MODFETs

30 January 1992

journal article
Published by Institution of Engineering and Technology (IET) in Electronics Letters

Vol. 28 (3) , 329-330
https://doi.org/10.1049/el:19920204

Abstract

A series of 1.3μm gate length Ga_1−xIn_xAs/Al_0.48In_0.52As MODFETs covering a wide range of x values in the channel (0.53 ≤ x ≤ 0.90 with strain compensation for x ≥ 0.77) has been successfully fabricated and compared. Although the maximum values of transconductance (1010mS/mm), saturated drain current density (920mA/mm), and room-temperature mobility are obtained with x = 0.85, lower x values of 0.77–0.80 are found to offer the highest 77 K mobility and the best cutoff-frequency-gate-length product.

Keywords

STRAIN COMPENSATION
CUTOFF-FREQUENCY-GATE-LENGTH PRODUCT
ROOM-TEMPERATURE MOBILITY
1.3 MICRON
GATE LENGTH
DEVICE PERFORMANCE
SATURATED DRAIN CURRENT DENSITY
MODFETS
GA1-XINXAS-AL0.48IN0.52AS
TRANSCONDUCTANCE
III-V SEMICONDUCTORS

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Comparison of device performance of highly strained Ga 1−x InxAs/a1 0.48 In 0.52 As (0.53 ≤ × ≤ 0.90) MODFETs

Abstract

Keywords

Comparison of device performance of highly strained Ga _1−x InxAs/a1 _0.48 In _0.52 As (0.53 ≤ × ≤ 0.90) MODFETs