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Suppression of Stacking Fault Generation in Silicon Wafer by HCl Added to Dry O
2
Oxidation
Home
Publications
Suppression of Stacking Fault Generation in Silicon Wafer by HCl Added to Dry O
2
Oxidation
Suppression of Stacking Fault Generation in Silicon Wafer by HCl Added to Dry O
2
Oxidation
HS
Hiromitsu Shiraki
Hiromitsu Shiraki
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1 January 1976
journal article
Published by
IOP Publishing
in
Japanese Journal of Applied Physics
Vol. 15
(1)
,
83-86
https://doi.org/10.1143/jjap.15.83
Abstract
No abstract available
Cited
Cited by 19 articles
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