Passive modelocking of 1.3 µmsemiconductor laser amplifier inloop mirror configuration
- 20 July 1995
- journal article
- Published by Institution of Engineering and Technology (IET) in Electronics Letters
- Vol. 31 (15) , 1257-1258
- https://doi.org/10.1049/el:19950841
Abstract
A passively mode-locked 1.3 µm InGaAsP/InP semiconductor laser amplifier in a fibre loop mirror configuration, is demonstrated for the first time, to the authors' knowledge. Pulse durations of <20 ps at repetition rates of 0.5 – 2 GHz, an average output power level in the order of 1 mW and a tuning range of 1300 – 1320 nm were achieved. The laser has the potential for integration on a single chip, which would result in a compact and high repetition rate source of picosecond pulses in the second communication window.Keywords
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