Optical probing of field dependent effects in GaAs photoconductive switches

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Abstract
A new diagnostic technique for measuring electric fields on the surfaces of semiconductors is described. The diagnostic uses the Pockels effect which mixes the electric field on a semiconductor surface with that of an incident optical pulse in a nonlinear crystal rotating the polarization of the optical pulse. This rotation can be detected and used to extract the surface electric field. Electro-optic sampling as this technique is called allows us to study the physics of semiconductors subjected to high fields with 100-ps time resolution. We have seen field enhancements in GaAs in photoconductive switches which modeling has shown to be due to Gunn domains.

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