Very-high-purity InP l.p.e. layers
- 27 October 1977
- journal article
- Published by Institution of Engineering and Technology (IET) in Electronics Letters
- Vol. 13 (22) , 682-683
- https://doi.org/10.1049/el:19770483
Abstract
Very-high-purity l.p.e. InP layers with a μ77 of 67 000cm2/Vs and an n77 of 1.1 × 1015 cm−3, virtually uncompensated, having a low freeze-out ratio of 1.03, and with continuous surfaces with terraces but no inclusions, have been successfully grown, after the residual silicon donor in the melt has been baked away in H2 with trace amounts of H2O.Keywords
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