Interface chemistry of Hg1−xCdxTe
- 1 May 1985
- journal article
- Published by American Vacuum Society in Journal of Vacuum Science & Technology A
- Vol. 3 (3) , 1007-1010
- https://doi.org/10.1116/1.573239
Abstract
We present preliminary studies of room temperature formation of the Hg1−xCdxTe(110)–Cr interface. For Cr coverages below 2 Å, Cr atoms replace Hg atoms in a 10–13 Å thick semiconductor layer while elemental Te is released at the surface. The typical high coverage interface morphology consists of an elemental Te surface, a metallic Cr film, a Hg-depleted subsurface layer where Cr is bonded to Te, and finally the ternary semiconductor bulk. This complex interface chemistry is compared with recent results for Hg1−xCdxTe interfaces with simple and noble metals.Keywords
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