Modeling of the distributed gate RC effect in MOSFET's
- 1 January 1989
- journal article
- Published by Institute of Electrical and Electronics Engineers (IEEE) in IEEE Transactions on Computer-Aided Design of Integrated Circuits and Systems
- Vol. 8 (12) , 1365-1367
- https://doi.org/10.1109/43.44517
Abstract
No abstract availableThis publication has 1 reference indexed in Scilit:
- Gate electrode RC delay effects in VLSI'sIEEE Transactions on Electron Devices, 1985