Characterization of sharp phosphorus dopant features in silicon by secondary ion mass spectrometry

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Abstract
The in‐depth distribution of a sharp P dopant feature in Si grown by vapor phase epitaxy has been determined by secondary ion mass spectrometry under various bombardment conditions. It is shown that with a low energy primary 0+ 2 beam supplemented by oxygen gas flooding of the sample surface both sub‐ppm detection limits and good depth resolution can be obtained simultaneously. This combination is not possible by using either primary Cs+ bombardment, giving only good detection limits, or low energy oxygen bombardment, resulting in a good depth resolution but unfavorable detection limits.

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