CdSe Thin Films: Chemical Deposition Using N,N‐Dimethylselenourea and Ion Exchange Reactions to Modify Electrical Conductivity

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Abstract
Deposition of thin films from chemical baths containing cadmium citrate or cadmium tartrate complex ions and using N,N‐dimethylselenourea as the source of selenide is presented. Good quality thin films of thickness in the 0.1–0.5 μm range were deposited at 24 or 50°C. The as‐prepared films are of poor crystallinity. On annealing in air at 450°C for 1 h, well‐defined diffraction peaks matching with the hexagonal phase of are observed. These films have electrical conductivities and are only weakly photosensitive. However, the photosensitivity improves to ∼106on annealing in air at 450°C. Ion‐exchange reactions of the films in dilute solutions lead to (n‐type) with low photosensitivities. Annealing of these films at temperatures > 200°C leads to a reduction in while it enhances the photosensitivity. Immersion of the films in dilute solution makes the films p‐type, . Annealing of these films at temperatures >200°C causes degradation of the films. XPS depth profiles of the films are presented to illustrate the ion‐exchange reactions.

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