Edge-defined patterning of hyperfine refractory metal silicide MOS structures

1 November 1981

journal article
Published by Institute of Electrical and Electronics Engineers (IEEE) in IEEE Transactions on Electron Devices

Vol. 28 (11) , 1364-1368
https://doi.org/10.1109/t-ed.1981.20614

Abstract

Edge-defined patterning was used to obtain hyperfine (< ¼ µm) refractory metal silicide MOS structures. A patterning technique, using standard optical lithography and advanced etching technology, was developed and proven to result in submicrometer structures of controllable dimensions. Hyperfine MoSi2/SiO2/Si MOS structures were realized using a vertical aluminum step defined by CCl4plasma etching. The MoSi2patterning was performed using anisotropic planar etching in NF3. Functional relationships between Al step height (0.3- 0.9 µm), MoSi2film thickness (0.3-1.0 µm), and the resulting silicide linewidth (0.1-0.25 µm) and line height (0.3-0.9 µm) were investigated. It was found that the linewidth and height could be independently controlled.

Keywords

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