Thermal oxidation of n- and p-type 6H-silicon carbide
- 1 January 1994
- journal article
- Published by IOP Publishing in Physica Scripta
- Vol. T54, 291-293
- https://doi.org/10.1088/0031-8949/1994/t54/069
Abstract
Thermal oxides have been grown on monocrystalline 6H silicon carbide samples (n-type and p-type) with both carbon face and silicon face. The oxidation was performed in a dry oxygen ambient at 1523 K with or without the addition of TCA (Trichloroethane), or in wet pyrogenic steam at 1473 K. Polysilicon gates doped with POCl3 were used for electrical characterisation by capacitance-voltage measurements at room temperature. Large flatband voltage shifts indicate fixed oxide charges up to 1013 cm−2.Keywords
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