Accurate measurement of lifetime of excess base stored charge at high collector currents

1 March 1984

journal article
Published by Institute of Electrical and Electronics Engineers (IEEE) in IEEE Transactions on Electron Devices

Vol. 31 (3) , 374-378
https://doi.org/10.1109/t-ed.1984.21530

Abstract

The lifetime τSof the excess base stored charge of the saturated bipolar transistor is an important parameter of the charge-control model. A commonly used method for measuring τSis based on measuring the storage time tsin an inverter circuit. At high collector currents, it is difficult to measure the base current IBSwhich is necessary to drive the transistor to the edge of saturation, because of uncertainty inV_{B'C'}caused by the voltage drops across the collector and base spreading resistance inside the transistor. This paper presents new methods for measuring IBS, τS, and the current gain at the edge of saturation, and gives experimental results. The methods are very simple and are especially useful at high collector currents. In addition, we give principles for choosing the input "on" pulse width for measuring τS.

Keywords

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