GaAlAs buried-heterostructure lasers grown by a two-step MOCVD process

15 September 1983

journal article
Published by Institution of Engineering and Technology (IET) in Electronics Letters

Vol. 19 (19) , 759-760
https://doi.org/10.1049/el:19830518

Abstract

The fabrication and characterisation of GaAlAs buried-heterostructure laser diodes having low threshold currents (10 mA), high uniformity and planar surface structure, and grown exclusively by metalorganic chemical vapour deposition (MOCVD) are described. Single-longitudinal and transverse-mode operation of these devices has been observed. In addition, considerable suppression of relaxation resonance effects has been observed in the high-frequency modulation of these devices.

Keywords

SINGLE LONGITUDINAL MODE OPERATION
SEMICONDUCTOR LASER
METALORGANIC CHEMICAL VAPOUR DEPOSITION
BH LASER
PLANAR SURFACE STRUCTURE
GAALAS BURIED-HETEROSTRUCTURE LASERS
HIGH-FREQUENCY MODULATION
RELAXATION RESONANCE EFFECTS SUPPRESSION
HIGH UNIFORMITY
TRANSVERSE-MODE OPERATION
TWO-STEP MOCVD PROCESS
FABRICATION
LOW THRESHOLD CURRENTS
CHARACTERISATION

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