Thin film position sensitive detector based on amorphous silicon p–i–n diode
- 1 December 1994
- journal article
- Published by AIP Publishing in Review of Scientific Instruments
- Vol. 65 (12) , 3784-3786
- https://doi.org/10.1063/1.1144507
Abstract
The application of hydrogenated amorphous silicon (a–Si:H) to optoelectronic devices are now well established as a viable low cost technology and is presently receiving much interest. Taking advantage of the properties of a–Si:H based devices, single and dual axis large area (up to 80×80 mm2) thin film position sensitive detectors (TFPSD) based on a–Si:H p–i–n diodes have been developed, produced by plasma enhanced chemical vapor deposition. In this study, the main optoelectronic properties presented by the TFPSD as well as their behavior under operation conditions, concerning its linearity and signal to noise ratio, are reported.Keywords
This publication has 2 references indexed in Scilit:
- Material properties, project design rules and performances of single and dual-axis a-Si:H large area position sensitive detectorsJournal of Non-Crystalline Solids, 1993
- Hydrogenated amorphous silicon position sensitive detectorJournal of Applied Physics, 1985