The response of p-i-n junctions to beta rays I. Open-circuit voltage versus surface dose rate for phosphorus-32 and thallium-204

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Abstract
The surface absorbed dose rate in polystyrene, delivered by various [beta]-ray sources, was compared with the response of lithium-drifted p-i-n junctions, as measured by the open circuit voltage induced across the junction by the [beta]-radiation. The potential induced across the junction under irradiation is conveniently measured by simple instrumentation and has higher sensitivity than other simple methods. The surface absorbed dose rate in polystyrene was measured at a point corresponding in each case to the centre of the detector in a plane coincident with the detector surface; a thin-window parallel-plate extrapolation-type ionization chamber was used. The geometric factors influencing the ratio of the 2 measurements were investigated as a function of source-to-detector distance by varying detector area, source area, source thickness, and energy of the [beta]-ray spectrum.