ESCA and SEXAFS investigations of insulating materials for ULSI microelectronics
- 1 January 1990
- Vol. 41 (7-9) , 1586-1589
- https://doi.org/10.1016/0042-207x(90)94025-l
Abstract
No abstract availableKeywords
This publication has 16 references indexed in Scilit:
- Comparative photoemission study of the adsorption of , O, and on a-Si surfaces at low temperaturePhysical Review B, 1989
- SiO2 in 6:3 (stishovite) and 4:2 Co‐ordination—Characterization by core level spectroscopy (XPS/XAES)Surface and Interface Analysis, 1988
- Improved ab initio calculations of amplitude and phase functions for extended x-ray absorption fine structure spectroscopyJournal of the American Chemical Society, 1988
- Photoemission study of(0≤x≤2) alloysPhysical Review B, 1988
- Oxygen distribution in silicon nitride powdersJournal of Materials Science, 1987
- Downstream Plasma Induced Deposition of SiN x on Si, InP , and InGaAsJournal of the Electrochemical Society, 1987
- Characterization of amorphous SiOx layers with ESCASurface Science, 1985
- Interpretation of XPS core level shifts and structure of thin silicon oxide layersSurface Science, 1985
- Ab initio calculations of amplitude and phase functions for extended x-ray absorption fine structure spectroscopyJournal of the American Chemical Society, 1979
- Surface Oxidation of Silicon Nitride FilmsJournal of the Electrochemical Society, 1976