Effect of circuit oscillations on the dc current-voltage characteristics of double barrier resonant tunneling structures
- 25 April 1988
- journal article
- research article
- Published by AIP Publishing in Applied Physics Letters
- Vol. 52 (17) , 1398-1400
- https://doi.org/10.1063/1.99127
Abstract
The influence of external circuit parameters on the measured current-voltage behavior of double barrier resonant tunneling structures is studied both experimentally and through modeling. It is demonstrated that characteristic ‘‘plateaulike’’ structures, which often appear in the region of negative differential resistance, can be accounted for in terms of the oscillating nature of the circuit, given that only average currents and voltages are monitored.Keywords
This publication has 8 references indexed in Scilit:
- Comment on ‘‘Observation of intrinsic bistability in resonant-tunneling structures’’Physical Review Letters, 1987
- Negative differential resistance of double barrier diodes at zero biasApplied Physics Letters, 1987
- Observation of intrinsic bistability in resonant tunneling structuresPhysical Review Letters, 1987
- Importance of space-charge effects in resonant tunneling devicesApplied Physics Letters, 1987
- Tunneling through indirect-gap semiconductor barriersPhysical Review B, 1986
- Frequency limit of double-barrier resonant-tunneling oscillatorsApplied Physics Letters, 1985
- Resonant tunneling through quantum wells at frequencies up to 2.5 THzApplied Physics Letters, 1983
- High-Frequency Negative-Resistance Circuit Principles for Esaki Diode ApplicationsBell System Technical Journal, 1960