Active mode locking of an erbium-doped fiber laser using an intracavity laser diode device
- 1 August 1990
- journal article
- Published by Institute of Electrical and Electronics Engineers (IEEE) in IEEE Photonics Technology Letters
- Vol. 2 (8) , 543-545
- https://doi.org/10.1109/68.58043
Abstract
A ridge waveguide, GaInAsP semiconductor laser chip has been used intracavity as a loss modulator in an erbium-doped fiber laser. Operating at modulation rates of around 500 MHz, typical pulse durations of 40 ps were obtained, with average output powers of up to 10 mW.Keywords
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