Low-Temperature Passivation of Semiconductor Devices and Their Reliability
- 1 May 1970
- journal article
- Published by Institute of Electrical and Electronics Engineers (IEEE) in IEEE Transactions on Reliability
- Vol. R-19 (2) , 71-74
- https://doi.org/10.1109/tr.1970.5216395
Abstract
Some electrical and physical characteristics of integrated circuits with passivation by low-temperature vapor deposition of glass were studied. It was found that 1) passivated devices have more resistance to aluminum corrosion than nonpassivated devices, 2) during temperature cycling the glass on the top of the aluminum inhibits the formation of hillocks, and 3) passivated devices offer more protection from mechanical abrasions and foreign materials. Some electrical parameters of transistors as well as integrated circuits were measured before and after passivation; no significant differences were found. No degradation on these parameters was found after a 1000-hour operating life test on passivated and nonpassivated units.Keywords
This publication has 2 references indexed in Scilit:
- The effects of dielectric overcoating on electromigration in aluminum interconnectionsIEEE Transactions on Electron Devices, 1969
- Thermal Cycling and Surface Reconstruction in Aluminum Thin FilmsJournal of the Electrochemical Society, 1969