Yellow light (576 nm) lasing emission of GaInP/AlInP multiple quantum well lasers prepared by gas-source-molecular-beam-epitaxy

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Abstract
GaInP/AllnP MQW short-wavelength lasers with AlInP cladding layers were fabricated using a gas source molecular beam epitaxy (GSMBE) for the first time. The film thickness of the GalnP wells and AllnP barriers were 3 and 2 nm, respectively. A yellow light lasing emission (576 nm) at 109 K was demonstrated by the MQW structure.