Tunneling cyclotron resonance and the renormalized effective mass in semiconductor barriers
- 22 January 1990
- journal article
- research article
- Published by American Physical Society (APS) in Physical Review Letters
- Vol. 64 (4) , 471-474
- https://doi.org/10.1103/physrevlett.64.471
Abstract
Tunneling cyclotron resonance is used to measure the tunneling rate deep in the band gap of a pure AlAs barrier in a thin barrier GaAs/AlAs superlattice. The experimental results are analyzed in terms of a four-band k⋅P model which leads to a renormalized effective mass in the barrier. Excellent agreement with experiment is achieved and we are able to conclude that the mass in the AlAs barrier is strongly renormalized down to 0.09 from the bulk-conduction-band value of 0.15. .AE
Keywords
This publication has 12 references indexed in Scilit:
- Short-period GaAs-AlAs superlattices: Optical properties and electronic structurePhysical Review B, 1988
- Breakdown of cyclotron resonance in semiconductor superlatticesSolid State Communications, 1988
- Barrier-Bound Resonances in Semiconductor Superlattices in Strong Magnetic FieldsPhysical Review Letters, 1987
- Magnetic levels in superlatticesSuperlattices and Microstructures, 1986
- Electron Mass Tunneling along the Growth Direction of (Al,Ga) As/GaAs Semiconductor SuperlatticesPhysical Review Letters, 1986
- Measurement of the miniband width in a superlattice with interband absorption in a magnetic field parallel to the layersSolid State Communications, 1985
- Theoretical investigations of superlattice band structure in the envelope-function approximationPhysical Review B, 1982
- Electronic Properties of Flat-Band Semiconductor HeterostructuresPhysical Review Letters, 1981
- Space-Charge Effects on Electron TunnelingPhysical Review B, 1966
- Band structure of indium antimonideJournal of Physics and Chemistry of Solids, 1957