Novel two-step SDB technology for high-performance thin-film SOI/MOSFET applications

16 March 1989

journal article
Published by Institution of Engineering and Technology (IET) in Electronics Letters

Vol. 25 (6) , 394-395
https://doi.org/10.1049/el:19890271

Abstract

A novel two-step oxided silicon wafer direct bonding process (TSDB) for fabricating high-quality SOI substrates is presented, which has no contamination, no complex thinning process and no subsurface damage. The fracture strength of the SOI/TSDB material is 180 kg/cm². SOI/TSDB NMOS and PMOS devices (0.8–3μm) have shown that the typical values of electron and hole surface channel mobility are 680 and 320cm²/Vs, respectively. A high device transconductance end high on-off current ratio have also been obtained.

Keywords

0.8 TO 3 MICRON
FRACTURE STRENGTH
TSDB
HIGH-QUALITY SOI SUBSTRATES
ON-OFF CURRENT RATIO
ELECTRON MOBILITY
DEVICE TRANSCONDUCTANCE
SEMICONDUCTORS
WAFER DIRECT BONDING PROCESS
THIN-FILM SOI/MOSFET APPLICATIONS
HOLE MOBILITY
SI-SIO2-SI BOND
TWO-STEP SDB TECHNOLOGY
SI WAFER DIRECT BONDING

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