Observation of Initial Stage of Al Epitaxial Growth on Si(111) by Ionized Cluster Beam Deposition
- 1 March 1985
- journal article
- Published by IOP Publishing in Japanese Journal of Applied Physics
- Vol. 24 (3A) , L173
- https://doi.org/10.1143/jjap.24.l173
Abstract
The initial stage of Al(111)//Si(111), Al[1̄10]//Si[1̄10] growth at room temperature by ionized cluster beam deposition was observed by reflection electron diffraction. At the initial stage of deposition (less than 10 nm in thickness) Al crystals with (100) plane parallel to the substrate surface nucleated. Three identical Al(100) crystals were found to exist simultaneously, whose azimuthal orientations were respectively Al[011]//Si[2̄11], Al[011]//Si[1̄10] and Al[011]//Si[1̄21̄].Keywords
This publication has 1 reference indexed in Scilit:
- Epitaxial growth of Al on Si(111) and Si(100) by ionized-cluster beamJournal of Applied Physics, 1984