AlInAs/GaInAs/InP double heterojunction bipolar transistor with a novel base-collector design for power applications
- 1 March 1996
- journal article
- Published by Institute of Electrical and Electronics Engineers (IEEE) in IEEE Electron Device Letters
- Vol. 17 (3) , 133-135
- https://doi.org/10.1109/55.485191
Abstract
We report the performance of an AlInAs/GaInAs/InP DHBT with a new collector design. The base-collector junction was formed with an all arsenide chirped superlattice with linear variation in the average composition. A doping dipole was inserted at the ends of the superlattice to cancel the quasielectric field. The conduction band offset between AlInAs and InP enabled hot electrons to be launched into the InP collector. The new design resulted in an excellent combination of speed and breakdown voltage with superior microwave power performance at X-band. Output power of 2 W (5.6 W/mm) with 70% power-added-efficiency at 9 GHz was achieved.Keywords
This publication has 8 references indexed in Scilit:
- 20 W linear, high efficiency internally matched HBT at 7.5 GHzPublished by Institute of Electrical and Electronics Engineers (IEEE) ,2002
- Power performance and reliability of AlInAs/GaInAs/InP double heterojunction bipolar transistorsPublished by Institute of Electrical and Electronics Engineers (IEEE) ,2002
- A scalable MMIC-compatible power HBTPublished by Institute of Electrical and Electronics Engineers (IEEE) ,2002
- 1 W Ku-band AlGaAs/GaAs power HBT's with 72% peak power-added efficiencyIEEE Transactions on Electron Devices, 1995
- A proposed collector design of double heterojunction bipolar transistors for power applicationsIEEE Electron Device Letters, 1995
- Ultrahigh f/sub T/ and f/sub max/ new self-alignment InP/InGaAs HBT's with a highly Be-doped base layer grown by ALE/MOCVDIEEE Electron Device Letters, 1995
- A 2 watt, 8-14 GHz HBT power MMIC with 20 dB gain and <40% power-added efficiencyIEEE Transactions on Microwave Theory and Techniques, 1994
- Bistable hot electron transport in InP/GaInAs composite collector heterojunction bipolar transistorsApplied Physics Letters, 1992