Synthesis of aluminum oxide thin films: Use of aluminum tris-dipivaloylmethanate as a new low pressure metal organic chemical vapor deposition precursor
- 11 September 1995
- journal article
- research article
- Published by AIP Publishing in Applied Physics Letters
- Vol. 67 (11) , 1624-1626
- https://doi.org/10.1063/1.114960
Abstract
Amorphous aluminum oxide thin films have been produced with low pressure metal organic chemical vapor deposition technique using the aluminum tris‐dipivaloylmethanate volatile precursor. Different carrier gases were used for the depositions. The surfaces of the films were analyzed using x‐ray photoelectron spectroscopy and secondary ion mass spectrometry. A very low content of carbon was verified when oxygen and water vapor saturated argon were used as carrier gases. A higher hydration percentage of the deposited material was verified when water vapor was present during the deposition process.Keywords
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