Carrier Mobilities in Pb1−xSnxTe Alloys

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Abstract
Experimental measurements on the transport properties in Pb1−xSnxTe single‐crystal alloys at 77°K have been made as a function of both carrier concentration and composition. The measurements were made on p‐type materials, primary interest being in the carrier concentration range where impurity scattering was clearly dominant (p≥1×1019 cm−3). The entire compositional range has been studied and the results reveal the following compositional regions with differing transport characteristics: (1) the region containing from 2‐ to 5‐mol% SnTe, where there is a rapid decrease in hole mobility at any given carrier concentration, (2) the region from 5‐ to 37‐mol%, where the hole mobilities are essentially independent of composition, (3) the region from 37‐ to 40‐mol% SnTe, where a distinct discontinuity in the hole mobility occurs, and (4) the region from 40‐ to 100‐mol% SnTe, where the hole mobility gradually increases with tin content.

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