Impact of Coulomb blockade on low-charge limit of memory device
- 19 November 2002
- conference paper
- Published by Institute of Electrical and Electronics Engineers (IEEE)
- No. 01631918,p. 525-528
- https://doi.org/10.1109/iedm.1995.499253
Abstract
Using a new single-electron memory device having much better control of poly-Si and gate oxide than the reported one, stored-charge probability distribution is directly measured for the first time. This is made possible by the real-time electron counting capability of the memory device. The standard deviation of charge is found to be 0.6 electrons, which clearly demonstrates single-electron-level control capability of our device. The results agree excellently with our new dynamic Coulomb blockade model. Based on these results, the minimum number of stored electrons satisfying 1000-fit 1Gb reliability is revealed to be five.Keywords
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