Etched Schottky-barrier m.o.s.f.e.t.s using a single mask
- 25 March 1971
- journal article
- Published by Institution of Engineering and Technology (IET) in Electronics Letters
- Vol. 7 (5-6) , 133-134
- https://doi.org/10.1049/el:19710086
Abstract
A simplified method for fabricating silicon m.o.s. transistors using a single photographic mask is described. The source and drain regions are etched; underetching the oxide results in autoregistration of the gate. The characteristics of both Schottky-barrier and p–n junction source and drain devices are presented.Keywords
This publication has 1 reference indexed in Scilit:
- Device Considerations and ApplicationsPublished by Elsevier ,1970