Low-temperature H-ion implantation in aluminum
- 1 May 1981
- journal article
- Published by Elsevier in Nuclear Instruments and Methods
- Vol. 182-183, 937-942
- https://doi.org/10.1016/0029-554x(81)90825-9
Abstract
No abstract availableKeywords
This publication has 6 references indexed in Scilit:
- Oxygen content and oxide barrier thickness in granular aluminum filmsSolid State Communications, 1978
- High-dose neutron-irradiation effects in fcc metals at 4.6 KPhysical Review B, 1977
- Superconducting properties of aluminium thin films after ion implantation at liquid helium temperaturesJournal de Physique Lettres, 1975
- Resistivity annealing properties of aluminium thin films after ion implantation at liquid helium temperaturesJournal de Physique Lettres, 1975
- Superconducting and Normal State Properties of Dilute Indium-Tin Alloys: Bulk and Thin FilmPhysical Review B, 1965
- Boundary Effects in SuperconductorsReviews of Modern Physics, 1964