A Very-High-Conductivity of In-Doped CdTe Film

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Abstract
Very-high-conductivity CdTe films were prepared by co-evaporation of CdTe and In. The highest dark conductivity obtained was 103 S cm-1. It is shown that the highest conductivity film contains many In atoms doped interstitially into almost all wide space lattice points and forms a new crystal basis composed of Cd(0 0 0), Te(1/4 1/4 1/4) and In(1/2 1/2 1/2), (3/4 3/4 3/4). The interstitially doped In atoms were stable and did not move from the crystallite into the grain boundary, even when the film was heat-treated.