Influence of SiN/sub x/ passivation on the surface potential of GaInAs and AlInAs in HEMT layer structures
- 1 January 1996
- conference paper
- Published by Institute of Electrical and Electronics Engineers (IEEE)
Abstract
The surface Fermi level of Ga/sub 0.47/In/sub 0.53/As and Al/sub 0.48/In/sub 0.52/As is determined by Hall measurements on InP-based HEMT-type van der Pauw structures without and with downstream PECVD SiN/sub x/ surface passivation. The passivation increases the surface Fermi level towards the conduction band-edge for both semiconductors in particular for low deposition temperatures. While the increase is clearly noticeable on GaInAs it appears less marked on AlInAs. From the finding that the resulting enhancement of carrier density in the GaInAs cap layer does not lower the DC channel resistivity of SiN/sub x/ passivated HEMT devices conclusions can be drawn about the path of the current in the source and drain regions.Keywords
This publication has 4 references indexed in Scilit:
- Modelling of the electronic structure for an AlGaAs/GaAs/AlGaAs HFET with a δ-doping layer inside the quantum wellSolid-State Electronics, 1993
- Very high purity In0.53Ga0.47As grown by molecular beam epitaxyJournal of Electronic Materials, 1991
- Surface and interfacial properties of Ga0.47In0.53As–Al2O3 MIS structuresJournal of Vacuum Science & Technology B, 1983
- Theory of an Experiment for Measuring the Mobility and Density of Carriers in the Space-Charge Region of a Semiconductor SurfacePhysical Review B, 1958