Characterization of Cu(In,Ga)Se2 Thin Films Prepared by Thermal Crystallization Using Two Kinds of Heating Rate
- 1 January 2000
- journal article
- Published by IOP Publishing in Japanese Journal of Applied Physics
- Vol. 39 (S1)
- https://doi.org/10.7567/jjaps.39s1.158
Abstract
Cu(In,Ga)Se2 thin films were prepared by thermal crystallization combining two heating rates, which were 1°C/min from room temperature to 200°C and subsequently 4°C/min above 200°C, and characterized. The crystallized thin films were transformed into single phase chalcopyrite Cu(In,Ga)Se2 above 400°C. The splitting of 112 diffraction line was observed in the XRD patterns for Cu(In,Ga)Se2 thin films treated in the range of 400-550°C, indicative of the graded Ga concentration. The resistivity and the mobility of Cu(In,Ga)Se2 thin films were increased with increasing the annealing temperature. The band gap was estimated 1.34 eV close to the optimum range for solar energy conversion.Keywords
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