Self-consistent model for ambipolar tunneling in quantum-well systems
Preprint
- 1 September 1997
Abstract
We present a self-consistent approach to describe ambipolar tunneling in asymmetrical double quantum wells under steady-state excitation and extend the results to the case of tunneling from a near-surface quantum well to surface states. The results of the model compare very well with the behavior observed in photoluminescence experiments in $InGaAs/InP$ asymmetric double quantum wells and in near-surface $AlGaAs/GaAs$ single quantum wells.
Keywords
All Related Versions
- Version 1, 1997-09-01, ArXiv
- Published version: Semiconductor Science and Technology, 10 (5), 577.
This publication has 0 references indexed in Scilit: