Diode structures formed by rapid thermal annealing of boron implanted silicon
- 1 January 1985
- journal article
- Published by AIP Publishing in Applied Physics Letters
- Vol. 46 (1) , 35-37
- https://doi.org/10.1063/1.95841
Abstract
Rapid annealing of boron implanted (100) silicon has been used to fabricate p+-n diodes. After an implant dose of 3×1015 ion cm−2 and a 1-s anneal at 1100 °C, a sheet resistance of 40 Ω/⧠ is obtained. The junction depth is 0.34 μm, measured by spreading resistance profiling. The leakage current at −5 V is 40 nA cm−2. Secondary ion mass spectrometry shows that the boron dopant diffuses rapidly (≂50 nm) during the first second of an anneal at 1100 °C. The residual implantation damage does not appear to have a deleterious effect on diode characteristics.Keywords
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