GaN-based LEDs grown by molecular beam epitaxy
- 7 April 1998
- proceedings article
- Published by SPIE-Intl Soc Optical Eng
- Vol. 3279, 28-35
- https://doi.org/10.1117/12.304427
Abstract
We report on the growth of GaN, InGaN and GaN/InGaN/GaN pn- junctions grown on sapphire by RF-plasma assisted MBE. MBE allows us to grow high quality nitrides with growth rates around 1 micrometers /h at relatively low temperatures. Thereby p- type doping with Mg and the incorporation of In in InGaN are greatly facilitated. Device-typical n- and p-type doping levels yield room temperature mobilities of 220 cm2/Vs and 10 cm2/Vs, respectively. InGaN with In contents of more than 40 percent is readily achieved. LEDs fabricated from heterostructures with a 4 nm InGaN layer show bright blue or green electroluminescence depending on the In content. Various effects in the electroluminescence caused by fluctuations in the conduction and valence band will be discussed, the most striking one a reduction in linewidth with increasing temperature.This publication has 0 references indexed in Scilit: