1.4 kV 4H-SiC UMOSFET with low specific on-resistance

• 27 November 2002
• proceedings article
• Published by Institute of Electrical and Electronics Engineers (IEEE)
• p. 119-122
• https://doi.org/10.1109/ispsd.1998.702650

Abstract

Keywords

• PACKAGING
• THERMAL CONDUCTIVITY
• CURRENT DENSITY
• ELECTRIC RESISTANCE
• ROOM TEMPERATURE
• POWER MOSFET
• TEMPERATURE
• DIODES
• CRYSTALS
• FABRICATION
• VOLTAGE
• BREAKDOWN VOLTAGE