Reduction of apparent dopant concentration in the surface space charge layer of oxidized silicon by ionizing radiation
- 15 October 1984
- journal article
- Published by AIP Publishing in Applied Physics Letters
- Vol. 45 (8) , 900-902
- https://doi.org/10.1063/1.95407
Abstract
We have observed significant reduction of apparent dopant concentration in the surface space charge layer of oxidized silicon resulting from exposure to either an Ar plasma or x rays. Such phenomenon has been found in both p-type (boron doped) and n-type (phosphorus doped) samples. In addition, the magnitude of this reduction depends systematically on the diameter of the gate aluminum dots used to form the metal/SiO2/Si capacitor. In the range (10–60 mil) studied, samples with smaller gate sizes exhibit less dopant reduction. These results may be explained by a model based on the majority-carrier reduction due to the radiation-induced deep electron and hole traps in the surface space charge region of silicon.Keywords
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