Mechanism of growth of ultrathin SiO2 layers on silicide substrates
- 3 October 1985
- journal article
- Published by Elsevier in Surface Science
- Vol. 162 (1-3) , 702-707
- https://doi.org/10.1016/0039-6028(85)90969-0
Abstract
No abstract availableKeywords
This publication has 9 references indexed in Scilit:
- Photoemission studies of a clean and oxidized niobium-aluminum alloy using synchrotron radiationSolid State Communications, 1983
- Oxidation behavior of PdSi compoundsThin Solid Films, 1983
- Oxygen chemisorption and oxide formation on Si(111) and Si(100) surfacesJournal of Vacuum Science & Technology A, 1983
- Silicon surfaces : metallic character, oxidation and adhesionJournal de Physique, 1983
- Chemical bonding and charge redistribution: Valence band and core level correlations for the Ni/Si, Pd/Si, and Pt/Si systemsJournal of Vacuum Science and Technology, 1982
- Auger-UPS study of intrinsic and Si-stabilized oxides of palladiumSurface Science, 1982
- A photoemission study of clean and oxidized Nb3SnPhysics Letters A, 1982
- High-Resolution X-Ray Photoelectron Spectroscopy as a Probe of Local Atomic Structure: Application to Amorphous Siand the Si-SiInterfacePhysical Review Letters, 1979
- Low-temperature oxidationOxidation of Metals, 1970