Measurements of the polarization dependence of field-induced refractive index changes in GaAs/AlAs multiple quantum well structures
- 11 July 1988
- journal article
- conference paper
- Published by AIP Publishing in Applied Physics Letters
- Vol. 53 (2) , 86-88
- https://doi.org/10.1063/1.100356
Abstract
The measurements of the polarization dependence of field‐induced refractive index changes in GaAs/AlAs multiple quantum wells, which are directly measured by using the modulation spectroscopy method for the TE and TM modes, are described. Clear polarization dependences, such as differences in the spectra shape and the peak wavelength, were observed. The polarization dependences originate from the different excitonic transitions: the n=1 heavy‐hole and light‐hole exciton for the TE mode and the n=1 light‐hole exciton for the TM mode. The experimental results show qualitatively good agreement with the theoretical calculation.Keywords
This publication has 13 references indexed in Scilit:
- Connection-based media access for multichannel local and metropolitan area networksElectronics Letters, 1987
- Electro-optic effects and electroabsorption in a GaAs/AlGaAs multiquantum-well heterostructure near the bandgapElectronics Letters, 1987
- Monolithically integrated optical gate 2 × 2 matrix switch using GaAs/AlGaAs multiple quantum well structureElectronics Letters, 1987
- GaInAs/InP waveguide multiple-quantum-well optical modulator with 9 dB on/off ratioElectronics Letters, 1987
- Electric field induced refractive index changes in GaAs-AlxGa1−xAs quantum wellsApplied Physics Letters, 1987
- Opening the knapsack by DFTsElectronics Letters, 1987
- Wavelength dependence of high-performance AlGaAs/GaAs waveguide phase modulatorsElectronics Letters, 1987
- Field-induced modulations of refractive index and absorption coefficient in a GaAs/AlGaAs quantum well structureElectronics Letters, 1986
- Dielectric properties of GaAs AlGaAs multiple quantum well waveguidesIEEE Journal of Quantum Electronics, 1986
- Electroreflectance at a Semiconductor-Electrolyte InterfacePhysical Review B, 1967