Compensation Effect in the Electrical Conduction Process in Some Nitroaromatic Semiconductors

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Abstract
The validity of the compensation rule has been studied for some nitroaromatic semiconductors, namely 1,3,5-trinitrobenzene (TNB), 1,4-dinitronaphthalene (DNN) and 9-nitroanthracene (NA). The activation energy (E) of electrical conductivity of these semiconductors was varied by adsorbing different organic vapours and also different amounts of a particular vapour. Only vapours showing fast and reversible adsorption and desorption were used for the purpose. Such vapours, on adsorption on the semiconductor crystallites, enhances the conductivity of these nitroaromatics with concomitant increase in E. It has been observed that specific conductivity in these nitroaromatics follow the compensation equation log σ(T)=log σ0 ′+[1/T 0-1/T]E/2K. The constants E, σ0 ′ and the compensation temperature T 0 characterise the semiconductor system, σ0 ′ and T 0 being specific to a particular nitroaromatic compound. Various methods used for evaluating σ0 ′ and T 0 have yielded consistent values suggesting a physical basis for the compensation effect. T 0 has been found to play a significant role in dark conduction process.

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