Monolithically integrated 2×2 InGaAsP/InP laser amplifier gate switch arrays

9 April 1992

journal article
Published by Institution of Engineering and Technology (IET) in Electronics Letters

Vol. 28 (8) , 776-778
https://doi.org/10.1049/el:19920490

Abstract

Monolithically integrated 2×2 semiconductor laser amplifier gate switch arrays have been fabricated and evaluated. Net positive chip gain, high extinction ratio, and high electrical isolation between the integrated laser amplifiers are reported.

Keywords

INTEGRATED OPTOELECTRONICS
INGAASP-INP
SEMICONDUCTOR LASER AMPLIFIER GATE SWITCH ARRAYS
EXTINCTION RATIO
INTEGRATED LASER AMPLIFIERS
NET POSITIVE CHIP GAIN
ELECTRICAL ISOLATION

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