Low-frequency emissions from deep levels in GaAs MESFETs
- 4 March 1982
- journal article
- Published by Institution of Engineering and Technology (IET) in Electronics Letters
- Vol. 18 (5) , 207-208
- https://doi.org/10.1049/el:19820142
Abstract
Low-frequency natural oscillations have been observed in ion-implanted GaAs test MESFETs based on undoped LEC grown semi-insulating substrates that originate from deep levels.Keywords
This publication has 1 reference indexed in Scilit:
- Dark Capacitance, Photocapacitance, Dark Conductance and Photoconductance Transients on GaAs MesfetsPublished by Springer Nature ,1980