Lack of importance of ambient gases on picosecond laser-induced phase transitions of silicon
- 15 April 1981
- journal article
- Published by AIP Publishing in Applied Physics Letters
- Vol. 38 (8) , 617-619
- https://doi.org/10.1063/1.92454
Abstract
No abstract availableKeywords
This publication has 6 references indexed in Scilit:
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- Influence of 16O, 12C, 14N, and noble gases on the crystallization of amorphous Si layersJournal of Applied Physics, 1977
- Cleaning of Silicon Surfaces by Heating in High VacuumJournal of Applied Physics, 1959