Production of Polycrystalline n-TiO2-Layers for Photoelectrodiemical Purpose

Abstract
The preparation of highly photoactive, polycrystalline n-TiO2-semiconductors by thermochemical oxidation of Titanium metal sheets was investigated systematically. The optimum temperature in an oxygen atmosphere was found to be between 550 °C and 650 °C for a period of 10-30 min. Careful etching of the Titanium surface prior to oxidation is a decisive step in the production process. The growth, adhesion on the substrate and photoefficiency of the TiO2- crystals were studied under various experimental conditions. TiO2-layers prepared under optimum conditions showed a photocurrent higher than 2 mA • cm-2 in 0.1 mol • dm-3 KCl as electrolyte and about 6 mA • cm-2 in 1 mol • dm-3 KOH, respectively. The overall energy conversion was ≅ 3.5%

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