Electrical Performance of Metal-Insulator-Piezoelectric Semiconductor Transducers
- 15 March 1967
- journal article
- research article
- Published by AIP Publishing in Journal of Applied Physics
- Vol. 38 (4) , 1948-1955
- https://doi.org/10.1063/1.1709788
Abstract
The theory underlying the operation of metal‐insulator‐piezoelectric (MIPS) electromechanical transducers is verified experimentally for time‐varying loads on devices made from CdS piezoelectric film materials. Experimental transducers exhibit sensitivities of the same order as those observed under static loading within times shorter than one microsecond after the application of mechanical stress. The frequency limitations for the transducer appear to be determined by the electrical properties of the MOS structure. The MIPS effect is demonstrated experimentally in CdSe transducers. Transducers fabricated on a flexible polyimide film are described, and a microphone embodying this construction is discussed. Transducers made with CdS films have properties which are more reproducible than are obtained from transducers using CdSe films. X‐ray studies show this result to be linked to crystal structure in the semiconductor layers.This publication has 6 references indexed in Scilit:
- MIPS transducer microphoneProceedings of the IEEE, 1966
- A metal-insulator-piezoelectric semiconductor electromechanical transducerIEEE Transactions on Electron Devices, 1965
- TRANSDUCER ACTION IN A METAL-INSULATOR-PIEZOELECTRIC-SEMICONDUCTOR TRIODEApplied Physics Letters, 1965
- Design theory of a surface field-effect transistorSolid-State Electronics, 1964
- Electroelastic Properties of the Sulfides, Selenides, and Tellurides of Zinc and CadmiumPhysical Review B, 1963
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