Low-threshold room-temperature embedded heterostructure lasers
- 15 September 1976
- journal article
- research article
- Published by AIP Publishing in Applied Physics Letters
- Vol. 29 (6) , 365-367
- https://doi.org/10.1063/1.89081
Abstract
Room‐temperature embedded double‐heterostructure injection lasers have been fabricated using selective liquid phase epitaxial growth. Threshold current densities as low as 1.5 kA/cm2 have been achieved in lasers grown through stripe windows opened in epitaxial GaAlAs masks.Keywords
This publication has 2 references indexed in Scilit:
- Embedded heterostructure epitaxy: A technique for two-dimensional thin-film definitionApplied Physics Letters, 1975
- High Power CW Operation of GaAs Injection Lasers at 77° KIBM Journal of Research and Development, 1964