Electronically-variable semiconductor memory using two diodes per memory cell
- 1 January 1970
- conference paper
- Published by Institute of Electrical and Electronics Engineers (IEEE)
- Vol. XIII, 46-47
- https://doi.org/10.1109/isscc.1970.1154795
Abstract
A read-write memory cell consisting of a high-barrier Schottky diode with a diffused guard ring connected in series with a diffused PN junction diode will be presented. One layer metallization connects the pairs of diodes in an array which can be accessed in random.Keywords
This publication has 2 references indexed in Scilit:
- Silicon Schottky Barrier Diode with Near-Ideal I-V CharacteristicsBell System Technical Journal, 1968
- P-N Junction Charge-Storage DiodesProceedings of the IRE, 1962