Measurements of the electrooptic effect in CdS, ZnTe, and GaAs at 10.6 microns
- 1 January 1968
- journal article
- Published by Institute of Electrical and Electronics Engineers (IEEE) in IEEE Journal of Quantum Electronics
- Vol. 4 (1) , 23-26
- https://doi.org/10.1109/jqe.1968.1074913
Abstract
No abstract availableThis publication has 9 references indexed in Scilit:
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- 5C3 - GaAs as an electrooptic modulator at 10.6 micronsIEEE Journal of Quantum Electronics, 1966
- Gallium arsenide electro-optic modulator for the 10.6-micron CO2laserPublished by Institute of Electrical and Electronics Engineers (IEEE) ,1966
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- Electrooptic light modulatorsProceedings of the IEEE, 1966
- Linear Electro-Optic Effect in CdSJournal of the Optical Society of America, 1964
- Volume-controlled current injection in insulatorsReports on Progress in Physics, 1964
- Electroelastic Properties of the Sulfides, Selenides, and Tellurides of Zinc and CadmiumPhysical Review B, 1963
- Determination of the Effective Ionic Charge of Gallium Arsenide from Direct Measurements of the Dielectric ConstantProceedings of the Physical Society, 1961