LEED investigation of extended defects at the surface of Ge films grown epitaxially on GaAs(110)

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Abstract
Some aspects of the defect structure at surfaces of Ge films grown epitaxially on cleaved GaAs(110) substrates at different growth conditions are investigated by LEED beam angular profile analysis. In particular, steps, domain size, and domain misorientation are considered. The average ordered domain size in the Ge films depends on growth conditions, but appears always to be smaller than that of the substrate with the growth conditions used here. There is no evidence of monatomic steps in either the substrates or the Ge films. The effect of possible multiatomic steps on the LEED profile is considered.

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