Spatially resolved observation of visible-light emission from Si MOSFET's

1 October 1983

journal article
Published by Institute of Electrical and Electronics Engineers (IEEE) in IEEE Electron Device Letters

Vol. 4 (10) , 386-388
https://doi.org/10.1109/edl.1983.25773

Abstract

Light emission from Si MOSFET's operating in the saturation region is observed. This observation provides direct evidence for the phenomenon of photocarrier generation in the substrate of VLSI's. The light emission appears to be uniform along the device width and emanates from the drain end of the MOSFET under normal operation. Light spots of much higher intensity are observed when the device is biased into the snap-back regime. This provides insights into the mechanism of snap-back breakdown.

Keywords

SPATIAL RESOLUTION
MOSFET CIRCUITS
P-N JUNCTIONS
PHOTONIC BAND GAP
VERY LARGE SCALE INTEGRATION
IONIZATION
ELECTRIC BREAKDOWN
RANDOM ACCESS MEMORY
STABILITY
READ-WRITE MEMORY

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